High-power single spatial mode superluminescent diodes at 675 nm

E.V. Andreeva; A.S. Anikeev; S.N. Il'chenko; A. Chamorovskiy; S.D. Yakubovich

High-power single spatial mode superluminescent diodes at 675 nm

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Author(s): E.V. Andreeva¹ ; A.S. Anikeev¹ ; S.N. Il'chenko¹ ; A. Chamorovskiy² ; S.D. Yakubovich³
- Affiliations: 1: Opton Ltd. , Mosfilmovskaya st.17B, 119330 Moscow , Russia ;
  2: Superlum Diodes Ltd. , Unit B3, Fota Point Enterprise Park, Carrigtwohill, Co Cork, T45FC93 , Ireland ;
  3: Moscow State Technological University (MIREA) , Vernadskogo prosp.78, Moscow 119454 , Russia
Source: Volume 53, Issue 23, 09 November 2017, p. 1539 – 1540
DOI: 10.1049/el.2017.2944 , Print ISSN 0013-5194, Online ISSN 1350-911X

Received 01/08/2017, Published 09/10/2017

The optimisation of AlGaInP/GaInPAs MQW heterostructure metal-organic chemical vapour deposition growth as well as the improvements of active channel formation and P-contact deposition technologies is shown to enable a significantly increased external differential efficiency up to 0.5 mW/mA and catastrophic optical damage threshold up to 50 mW of spatially single-mode superluminescent diodes (SLDs) at central wavelength of 675 nm. Life time tests demonstrated high reliability of new SLDs at continuous wave output power of up to 30 mW. The dependencies of spectral and power characteristics of these SLDs on active channel dimensions are presented. To the best of knowledge, these are the most powerful and broadband SLDs at 675 nm.

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