References

• 1. 1)
     • 1. Smit, G.D.J., Scholten, A.J., Pijper, R.M.T., et al: ‘RF-noise modeling in advanced CMOS technologies’, Trans. Electron Devices, 2014, 61, (2), pp. 245–254 (doi: 10.1109/TED.2013.2282960).
  2. 2)
     • 5. Andersson, S., Svensson, C.: ‘Direct experimental verification of shot noise in short channel MOS transistors’, Electron. Lett., 2005, 41, (15), pp. 869–871 (doi: 10.1049/el:20051474).
  3. 3)
     • 2. Navid, R., Jungemann, C., Lee, T.H., et al: ‘High-frequency noise in nanoscale metal oxide semiconductor field effect transistors’, J. Appl. Phys., 2007, 101, p. 124501 (doi: 10.1063/1.2740345).
  4. 4)
     • 4. Mahajan, V.M., Patalay, P.R., Jindal, R.P., et al: ‘A physical understanding of RF noise in bulk nMOSFETs with channel lengths in the nanometer regime’, Trans. Electron Devices, 2012, 59, (1), pp. 197–205 (doi: 10.1109/TED.2011.2173691).
  5. 5)
     • 7. Chan, L.H.K., Yeo, K.S., Chew, K.W.J., et al: ‘MOSFET drain current noise modelling with effective gate overdrive and junction noise’, Trans. Electron Device Lett., 2012, 33, (8), pp. 1117–1119 (doi: 10.1109/LED.2012.2203781).
  6. 6)
     • 3. Je Jeon, J., Lee, J., Kim, J., et al: ‘The first observation of shot noise characteristics in 10 nm scale MOSFETs’. Symp. VLSI Technology, Kyoto, Japan, June 2009, pp. 48–49.
  7. 7)
     • 6. Chalkiadaki, M.A., Enz, C.C.: ‘RF small-signal and noise modeling including parameter extraction of nanoscale MOSFET from weak to strong inversion’, Trans. Microw. Theory Tech., 2015, 63, (7), pp. 2173–2184 (doi: 10.1109/TMTT.2015.2429636).