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Bias non-conservation characteristics of drain current noise of 40 nm n-MOSFETs in high-frequency band

Bias non-conservation characteristics of drain current noise of 40 nm n-MOSFETs in high-frequency band

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The behaviours of drain current noise of 40 nm n-MOSFETs are distinguished by comparing with 120 nm n-MOSFETs over an extended range of bias voltages and temperature. The measurement results strongly indicate that the high-frequency noise mechanism of 40 nm n-MOSFETs is changed from suppressed shot noise to thermal noise on conditions of low-voltage weak interaction.

References

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      • J. Je Jeon , J. Lee , J. Kim .
        3. Je Jeon, J., Lee, J., Kim, J., et al: ‘The first observation of shot noise characteristics in 10 nm scale MOSFETs’. Symp. VLSI Technology, Kyoto, Japan, June 2009, pp. 4849.
        . Symp. VLSI Technology , 48 - 49
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