access icon free A Novel approach to fabricate self-aligned graphene transistor

An innovated simple fabrication process is adopted to fabricate a novel gate self-aligned (GSA) graphene field effect transistor (GFET). First, stacked source/drain electrodes with triple-layer metal are formed. Then, after slightly etching of the second metal layer, laterally recessed profiles are formed, which leads to the self-aligned (SA) gate. A noticeable feature of the GSA-GFET is that the access resistance is not changed with the level of the lateral recessing, which leads to a very small access resistance. Compared with the non-SA-GFET with same gate length and width, the contact resistance of the GSA-GFET is reduced by 68%, the peak gm is 3.6 times improved, the on/off ratio is increased from 1.8 to 3.2.

Inspec keywords: graphene devices; contact resistance; field effect transistors

Other keywords: lateral recessing; gate self-aligned graphene field effect transistor; triple-layer metal; non-SA-GFET; GSA-GFET; gate length; stacked source-drain electrodes; access resistance; innovated simple fabrication process; contact resistance; gate width

Subjects: Electrical contacts; Insulated gate field effect transistors; Other field effect devices

References

    1. 1)
      • 15. Kim, S., Nah, J., Jo, I., et al: ‘Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric’, Appl. Phys. Lett., 2009, 94, p. 062107, doi: http://dx.doi.org/10.1063/1.3077021.
    2. 2)
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
    8. 8)
    9. 9)
    10. 10)
    11. 11)
      • 11. Farmer, D.B., Lin, Y.M., Avouris, P.: ‘Graphene field-effect transistors with self-aligned gates’, Appl. Phys. Lett., 2010, 97, p. 013103, doi: http://dx.doi.org/10.1063/1.3459972.
    12. 12)
    13. 13)
    14. 14)
    15. 15)
    16. 16)
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2017.2702
Loading

Related content

content/journals/10.1049/el.2017.2702
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Correspondence
This article has following corresponding article(s):
interview