© The Institution of Engineering and Technology
We report a distributed Bragg reflector-free semiconductor disc laser which emits 10 W continuous wave output power at a wavelength of 1007 nm when pumped with 40 W at 808 nm, focused into a 230 μm diameter spot on the gain chip. By introducing a birefringent filter plate in the laser cavity the wavelength could be tuned from 995 to 1020 nm. The laser consisted of a gain chip located at the beam waist of a linear concentric resonator with an output coupling of 2.15%. The gain chip consists of a 1.574-μm-thick resonant periodic gain structure, with ten In0.13Ga0.87As quantum wells embedded in strain-compensating GaAs0.94P0.06 barrier layers, van der Waals bonded to a silicon carbide intra-cavity heat spreader.
References
-
-
1)
-
4. Kantola, E., Leinonen, T., Ranta, S., et al: ‘High-efficiency 20 W yellow VECSEL’, Opt. Express, 2014, 22, (6), pp. 6372–6380 (doi: 10.1364/OE.22.006372).
-
2)
-
5. Paajaste, J., Suomalainen, S., Koskinen, R., et al: ‘High-power and broadly tunable GaSb-based optically pumped VECSELs emitting near 2 μm’, J. Cryst. Growth, 2009, 311, (7), pp. 1917–1919 (doi: 10.1016/j.jcrysgro.2008.10.071).
-
3)
-
8. Yang, Z., Albrecht, A.R., Cederberg, J.G., et al: ‘80 nm tunable DBR-free semiconductor disk laser’, Appl. Phys. Lett., 2016, 109, (022101), pp. 1–4.
-
4)
-
9. Kahle, H., Mateo, C.M.N., Brauch, U., et al: ‘Semiconductor membrane external-cavity surface-emitting laser (MECSEL)’, Optica, 2016, 3, (12), pp. 1506–1512 (doi: 10.1364/OPTICA.3.001506).
-
5)
-
7. Yang, Z., Albrecht, A.R., Cederberg, J.G., et al: ‘Optically pumped DBR-free semiconductor disk lasers’, Opt. Express, 2015, 23, (26), pp. 33164–33169 (doi: 10.1364/OE.23.033164).
-
6)
-
2. Okhotnikov, O.G.: ‘Semiconductor disk lasers: physics and technology’ (Wiley, 2010).
-
7)
-
1. Kuznetsov, M., Hakimi, F., Sprague, R., et al: ‘High-power ( > 0.5 W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams’, Photonics Technol. Lett., 1997, 9, (8), pp. 1063–1065 (doi: 10.1109/68.605500).
-
8)
-
7. Heinen, B., Wang, T.L., Sparenberg, M., Weber, A., Kunert, B., Hader, J., Koch, S.W., Moloney, J.V., Koch, M., Stolz, W.: ‘106 W continuous-wave output power from vertical-external-cavity surface-emitting laser’, Electron. Lett., 2012, 48, (9), pp. 516–U102 (doi: 10.1049/el.2012.0531).
-
9)
-
6. Tropper, A.C., Keller, U.: ‘Passively modelocked surface-emitting semiconductor lasers’, Phys. Rep., 2006, 429, (2), pp. 67–120 (doi: 10.1016/j.physrep.2006.03.004).
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2017.2689
Related content
content/journals/10.1049/el.2017.2689
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Correspondence
This article has following corresponding article(s):
in brief
DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm