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The breakdown and optical response of perimeter gated single-photon avalanche diodes fabricated in a standard 0.5 μm 2-poly 3-metal CMOS process is presented. These diodes prevent premature edge breakdown through the addition of a polysilicon gate. The fabricated devices feature varying size, shape (square, octagonal, and circular), and junction types (nwell-p+ and psub-nwell) with a perimeter gate located on top of the junction. Voltage applied to the gate modulates the electric field and its effect on the breakdown voltage and optical response is discussed. Experimental results are supported by physical device simulations where applicable.
References
-
-
1)
-
2. Dandin, M., Habib, M.H.U., Nouri, B., et al: ‘Characterization of single-photon avalanche diodes in a 0.5 μm standard CMOS process – Part 2: equivalent circuit model and geiger mode readout’, Sens. J., 2016, 16, (9), pp. 3075–3083 (doi: 10.1109/JSEN.2016.2526665).
-
2)
-
4. Wu, J., Lin, S.: ‘Simulation of electric field distribution in CMOS single photon avalanche diodes at breakdown voltage’. Int. Conf. Optical MEMS and Nanophotonics, Glasgow, UK, August 2014, pp. 187–188.
-
3)
-
5. Grove, A.S., Leistiko, O., Hooper, W.W.: ‘Effect of surface fields on the breakdown voltage of planar silicon p-n junctions’, Trans. Electron Devices, 1967, 14, (3), pp. 157–162 (doi: 10.1109/T-ED.1967.15916).
-
4)
-
3. Habib, M.H.U., McFarlane, N.: ‘A tunable dynamic range digital single photon avalanche diode’, Electron Device Lett., 2017, 38, (1), pp. 60–63 (doi: 10.1109/LED.2016.2628023).
-
5)
-
1. Dandin, M., Akturk, A., Nouri, B., et al: ‘Characterization of single-photon avalanche diodes in a 0.5 μm standard CMOS process – Part 1: perimeter breakdown suppression’, Sens. J., 2010, 10, (11), pp. 1682–1690 (doi: 10.1109/JSEN.2010.2046163).
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Breakdown and optical response of CMOS perimeter gated single-photon avalanche diodes