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Self-aligned graphene transistor

Self-aligned graphene transistor

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A novel self-aligned (SA) graphene FET (GFET) with small access resistance is fabricated. Only one photolithography is needed to define the gate and high gate capacitive efficiency is obtained using a metal gate-stack. In addition, damages to graphene resulting from the plasma are avoided. The cap metal layer is used as an etch stop layer and the etched stem metal layer is used as a support layer, which leads to the simplification of the fabrication process and the formation of the SA structure. Based on the same gate length (3 µm), the normalized G m of GSA-GFET is 8 times larger than the reported SA-GFET. Compared with the non-SA-GFET, the contact resistance of the SA-GFET is reduced by 50% and G m is 3.2 times improved.

References

    1. 1)
    2. 2)
    3. 3)
    4. 4)
    5. 5)
      • D.B. Farmer , Y.-M. Lin , P. Avouris .
        5. Farmer, D.B., Lin, Y.-M., Avouris, P.: ‘Graphene field-effect transistors with self-aligned gates’, Appl. Phys. Lett., 2010, 97, p. 013103, doi: http://dx.doi.org/10.1063/1.3459972.
        . Appl. Phys. Lett. , 013103
    6. 6)
      • H.C.P. Movva , M.E. Ramon , C.M. Corbet .
        6. Movva, H.C.P., Ramon, M.E., Corbet, C.M., et al: ‘Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions’, Appl. Phys. Lett., 2012, 101, p. 183113, doi: http://dx.doi.org/10.1063/1.4765658.
        . Appl. Phys. Lett. , 183113
    7. 7)
    8. 8)
    9. 9)
    10. 10)
    11. 11)
    12. 12)
    13. 13)
    14. 14)
      • S. Kim , J. Nah , I. Jo .
        14. Kim, S., Nah, J., Jo, I., et al: ‘Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric’, Appl. Phys. Lett., 2009, 94, p. 062107, doi: http://dx.doi.org/10.1063/1.3077021.
        . Appl. Phys. Lett. , 062107
    15. 15)
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