RT Journal Article
A1 Bo Lu
AD Smart Sensing Center, Institute of Microelectronics, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing, People's Republic of China
A1 Yong Chen
AD Key Laboratory of Particle Astrophysics, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
A1 Jiajun Luo
AD Key Laboratory of Silicon Device Technology and Smart Sensing Center respectively, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, People's Republic of China
A1 Yumei Zhou
AD Key Laboratory of Silicon Device Technology and Smart Sensing Center respectively, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, People's Republic of China

PB iet
T1 CDS circuit with BLA function for X-ray CCD applications
JN Electronics Letters
VO 53
IS 12
SP 770
OP 772
AB Correlated double sampling (CDS) circuits are essential to process the X-ray charge-coupled devices (CCDs) that have been used in the modern X-ray astronomical field. A novel CDS circuit is presented. The innovation of the circuit is that it greatly improves the noise and linearity performances through moving the clamping switch out of the signal path as well as omitting the sampling switch which eliminates the nonlinearity and thermal noise introduced by these switches. Also, a baseline adjustment (BLA) circuit is incorporated so as to make efficient use of the dynamic range of the ADC, making the CDS circuit flexible to interface the CCD operating under a wide range of temperatures. A prototype application-specific integrated circuit (ASIC) is designed with GlobalFoundries 0.35 μm CMOS process and the experimental results show that with pixel rate varying from 100 kHz to 1 MHz, the integral nonlinearity and equivalent input noise performances are quite consistent, which are better than 27 ppm and 23 μV, respectively, within a dynamic range of 1.5 Vpp. The effective adjustment range of the BLA is at least 2 V, and the power consumption for a single CDS core is 10 mW approximately from a 3.3 V power supply.
K1 X-ray astronomical field
K1 correlated double sampling circuits
K1 thermal noise
K1 ASIC
K1 X-ray charge-coupled devices
K1 size 0.35 mum
K1 pixel rate
K1 signal path
K1 frequency 100 kHz to 1 MHz
K1 baseline adjustment circuit
K1 integral nonlinearity
K1 equivalent input noise performance
K1 BLA circuit
K1 power consumption
K1 voltage 3.3 V
K1 X-ray CCD application
K1 BLA function
K1 power 10 mW
K1 sampling switch
K1 GlobalFoundries CMOS process
K1 clamping switch
K1 CDS circuit
DO https://doi.org/10.1049/el.2017.0702
UL https://digital-library.theiet.org/;jsessionid=1agnlo7jpqsrc.x-iet-live-01content/journals/10.1049/el.2017.0702
LA English
SN 0013-5194
YR 2017
OL EN