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A novel dopingless Ge-source dual metal drain double gate tunnel field effect transistor is presented with the help of work function engineering. Proposed device makes use of the dopingless concept, charge plasma for carrier doping concentration below the drain/source region that permits dynamic configuration by choosing suitable work function for drain/source metal electrode. In the proposed device, the n + drain region is divided into two parts of low and high work function. The work function of the metal nearest to the drain–channel junction is relatively higher than the other metal for creating a potential barrier for restricting the tunnelling of holes when the negative gate voltage is applied. By using low energy bandgap Ge material, the tunnelling probability and drive current of the device are increased. The proposed device offers high I ON/I OFF ratio (∼1013), smaller point subthreshold swing (SS) (∼31 mV/decade), average SS (∼43 mV/decade).
References
-
-
1)
-
11. Beneventi, G.B., Gnani, E., Gnudi, A., et al: ‘Optimization of a pocketed dual-metal-gate TFET by means of TCAD simulations accounting for quantization-induced bandgap widening’, IEEE Trans. Electron Devices, 2015, 62, (1), pp. 44–51 (doi: 10.1109/TED.2014.2371071).
-
2)
-
14. Damrongplasit, N., Shin, C., Kim, S.H., et al: ‘Study of random dopant fluctuation effects in germanium-source tunnel FETs’, IEEE Trans. Electron Dev., 2011, 58, (10), pp. 3541–3548 (doi: 10.1109/TED.2011.2161990).
-
3)
-
6. Juyal, R., Chauhan, S.S.: ‘TCAD simulation of germanium source dopingless tunnel FET’. IEEE Int. Conf. on Advance in Computing, Communication and Automation (ICACCA), Dehradun, Uttarakhand, India, April 2016.
-
4)
-
15. Bagga, N., Sarkar, S.K.: ‘An analytical model for tunnel barrier modulation in triple metal double gate TFET’, IEEE Trans. Electron Devices, 2015, 62, (7), pp. 2136–2142 (doi: 10.1109/TED.2015.2434276).
-
5)
-
6)
-
8. Hellings, G., Meyer, K.D.: ‘High mobility and quantum well transistors’, (Springer Publishing, Dordrecht, Netherlands, 2013), 42, pp. 49–72.
-
7)
-
3. Ionescu, A., Riel, M.: ‘Tunnel field-effect transistors as energy-efficient electronic switches’, Nature Publishing, 2011, 479, pp. 329–337 (doi: 10.1038/nature10679).
-
8)
-
7. Kumar, M.J., Janardhanan, S.: ‘Doping-less tunnel field effect transistor: design and investigation’, IEEE Trans. Electron Devices, 2013, 60, (10), pp. 3285–3290 (doi: 10.1109/TED.2013.2276888).
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