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access icon openaccess Electrical switching of photoluminescence of single site-controlled InAs quantum dots

Voltage-controlled photoluminescence (PL) switching is demonstrated for single site-controlled InAs quantum dots (QDs) embedded in Schottky–i–n diodes grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs templates. The PL emission was quenched by applying a voltage over the diode structure due to the increased tunnelling rate of charge carriers out of the QDs.

http://iet.metastore.ingenta.com/content/journals/10.1049/el.2016.0502
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content/journals/10.1049/el.2016.0502
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