Electrical switching of photoluminescence of single site-controlled InAs quantum dots

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Author(s): A. Schramm ¹ ; E. Koski ² ; J.M. Kontio ² ; J. Tommila ¹ ; T.V. Hakkarainen ¹ ; D. Lupo ² ; M. Guina ¹
- Affiliations: 1: Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere, Finland ;
  2: Department of Electronics and Communications Engineering, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere, Finland
Source: Volume 52, Issue 14, 07 July 2016, p. 1240 – 1242
DOI: 10.1049/el.2016.0502 , Print ISSN 0013-5194, Online ISSN 1350-911X

This is an open access article published by the IET under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/)

Received 29/02/2016, Published 14/06/2016

Voltage-controlled photoluminescence (PL) switching is demonstrated for single site-controlled InAs quantum dots (QDs) embedded in Schottky–i–n diodes grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs templates. The PL emission was quenched by applying a voltage over the diode structure due to the increased tunnelling rate of charge carriers out of the QDs.

Electrical switching of photoluminescence of single site-controlled InAs quantum dots

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