@ARTICLE{ iet:/content/journals/10.1049/el.2016.0502, author = {A. Schramm}, affiliation = { Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere, Finland }, author = {E. Koski}, affiliation = { Department of Electronics and Communications Engineering, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere, Finland }, author = {J.M. Kontio}, affiliation = { Department of Electronics and Communications Engineering, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere, Finland }, author = {J. Tommila}, affiliation = { Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere, Finland }, author = {T.V. Hakkarainen}, affiliation = { Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere, Finland }, author = {D. Lupo}, affiliation = { Department of Electronics and Communications Engineering, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere, Finland }, author = {M. Guina}, affiliation = { Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere, Finland }, keywords = {GaAs;voltage-controlled photoluminescence switching;QDs charge carrier tunnelling rate;nanoimprint lithography;InAs;PL emission;photoluminescence electrical switching;molecular beam epitaxy growth;diode structure;single site-controlled quantum dots;Schottky–i–n diodes;}, ISSN = {0013-5194}, language = {English}, abstract = {Voltage-controlled photoluminescence (PL) switching is demonstrated for single site-controlled InAs quantum dots (QDs) embedded in Schottky–i–n diodes grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs templates. The PL emission was quenched by applying a voltage over the diode structure due to the increased tunnelling rate of charge carriers out of the QDs.}, title = {Electrical switching of photoluminescence of single site-controlled InAs quantum dots}, journal = {Electronics Letters}, issue = {14}, volume = {52}, year = {2016}, month = {July}, pages = {1240-1242(2)}, publisher ={Institution of Engineering and Technology}, copyright = {This is an open access article published by the IET under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/)}, url = {https://digital-library.theiet.org/;jsessionid=123ee5iayb109.x-iet-live-01content/journals/10.1049/el.2016.0502} }