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A fully integrated broadband E-band power amplifier (PA) is implemented in 28 nm CMOS process. To enhance the output power (P OUT), an 8-way differential series-parallel power combiner is used together with the neutralised bootstrapped cascode amplifier topology. The unit PAs are realised by both NMOS and PMOS transistors, respectively, which cancel the amplitude-to-phase modulation (AM-PM) distortion due to non-linear gate-to-source capacitance (C GS) of NMOS and PMOS transistors under large input voltage amplitude. The presented PA achieves a saturated output power (P SAT) of 21.3 dBm with more than 18.5 GHz −3 dB small-signal bandwidth (BW−3 dB).
References
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content/journals/10.1049/el.2015.3839
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21.3 dBm 18.5 GHz-BW 8-way E-band power amplifier in 28 nm high performance mobile CMOS