An AlGaAs/GaAs quantum well (QW) laser is fabricated with GaInP and AlGaInAs asymmetric barrier layers (ABLs) and its light–current characteristic (LCC) is compared with that of a reference conventional QW laser without ABLs. It was found that the use of the ABLs suppresses the sublinearity of the LCC at high current densities. As a result, the maximum lasing power of 9.2 W, being limited by catastrophic optical mirror damage, is achieved at a considerably lower operating current in the laser with ABLs as compared to the reference laser (12.5 against 20.2 A). The ABL effect is associated with the suppression of the parasitic recombination in the optical confinement layer, as confirmed by a decrease of the intensity of the spontaneous emission from the layer.

References

1. 1)
  - 1. Asryan, L.V., Luryi, S., Suris, R.A.: ‘Internal efficiency of semiconductor lasers with a quantum-confined active region’, IEEE J. Quantum Electron., 2003, 39, (3), pp. 404–418, (doi: 10.1109/JQE.2002.808171).
2. 2)
  - 4. Hausser, S., Meier, H.P., Germann, R., Harder, Ch.S.: ‘1.3 μm multiquantum well decoupled confinement heterostructure (MQW-DCH) laser diodes’, IEEE J. Quantum Electron., 1993, 29, (6), pp. 1596–1600, (doi: 10.1109/3.234410).
3. 3)
  - 2. Pikhtin, N.A., Slipchenko, S.O., Sokolova, Z.N., Stankevich, A.L., Vinokurov, D.A., Tarasov, I.S., Alferov, Zh.I.: ‘16 W continuous-wave output power from 100 µm-aperture laser with quantum well asymmetric heterostructure’, Electron. Lett., 2004, 40, (22), pp. 1413–1414, (doi: 10.1049/el:20045885).
4. 4)
  - 9. Asryan, L.V., Kryzhanovskaya, N.V., Maximov, M.V., Zubov, F.I., Zhukov, A.E.: ‘Light–current characteristic of a quantum well laser with asymmetric barrier layers’, J. Appl. Phys., 2013, 114, (14), p. 143103, (doi: 10.1063/1.4824545).
5. 5)
  - 5. Kazarinov, R.F., Belenky, G.L.: ‘Novel design of AlGaInAs-InP lasers operating at 1.3 μm’, IEEE J. Quantum Electron., 1995, 31, (3), pp. 423–426, (doi: 10.1109/3.364396).
6. 6)
  - 10. Zubov, F.I., Zhukov, A.E., Shernyakov, Yu.M., Maximov, M.V., Kryzhanovskaya, N.V., Yvind, K., Semenova, S., Asryan, L.V.: ‘Effect of asymmetric barrier layers in the waveguide region on power characteristics of quantum well laser’, Semiconductors, 2012, 46, (8), p. 1027 (doi: 10.1134/S1063782612080246).
7. 7)
  - 6. Asryan, L.V., Luryi, S.: ‘Temperature-insensitive semiconductor quantum dot laser’, Solid-State Electron., 2003, 47, (2), pp. 205–212, (doi: 10.1016/S0038-1101(02)00196-X).
8. 8)
  - 8. Zhukov, A.E., Kryzhanovskaya, N.V., Zubov, F.I., Shernyakov, Yu.M., Maximov, M.V., Semenova, E.S., Yvind, K., Asryan, L.V.: ‘Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers’, Appl. Phys. Lett., 2012, 100, (2), p. 021107, (doi: 10.1063/1.3676085).
9. 9)
  - 7. Asryan, L.V., Kryzhanovskaya, N.V., Maximov, M.V., Egorov, A.Yu., Zhukov, A.E.: ‘Bandedge-engineered quantum well laser’, Semicond. Sci. Technol., 2011, 26, (5), p. 055025, (doi: 10.1088/0268-1242/26/5/055025).
10. 10)
  - 3. Crump, P., Erbert, G., Wenzel, H., Frevert, C., Schultz, C.M., Hasler, K.-H., Staske, R., Sumpf, B., Maassdorf, A., Bugge, F., Knigge, S., Trankle, G.: ‘Efficient high-power laser diodes’, IEEE J. Sel. Top. Quantum Electron., 2013, 19, (4), p. 501211, (doi: 10.1109/JSTQE.2013.2239961).

Correspondence

This article has following corresponding article(s):

interview

Suppression of sublinearity of light–current curve in 850 nm quantum well laser with asymmetric barrier layers

References

Related content