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Fully transparent dual-layer Ga-doped zinc oxide (GZO) thin-film transistors (TFTs) were fabricated on flexible plastic substrate by room temperature processes. The GZO thin films are deposited by radio-frequency sputtering according to the variation of the depositing time in order to optimise the performance of GZO TFTs. The results show that dual-layer GZO TFTs exhibit excellent electrical properties, mechanical flexibility and optical transparency. A saturation mobility μ s of 350 cm2/V.s, a linear field effect mobility of 281 cm2/V.s, a threshold voltage V TH of 3.2 V, a steep subthreshold swing of 268 mV/decade, a low off-state current value (I OFF) of 1.5 × 10−11 A and a high on/off ratio of about 108 were extracted. The TFTs also have admirable transparency with an average visible transmittance of 87.2%. These results indicate that GZO material is suitable for the next generation flexible displays.
References
-
-
1)
-
2. Frenzel, H., Lajn, A., von Wenckstern, H., Lorenz, M., Schein, F., Zhang, Z., Grundmann, M.: ‘Recent progress on ZnO-based metal-semiconductor field-effect transistors and their application in transparent integrated circuits’, Adv. Mater., 2010, 22, (47), pp. 5332–5349 (doi: 10.1002/adma.201001375).
-
2)
-
3. Fan, J.C., Sreekanth, K.M., Xie, Z., Chang, S.L., Rao, K.V.: ‘P-type ZnO materials: theory, growth, properties and devices’. Prog. Mater. Sci., 2013, 58, (6), pp. 874–985 (doi: 10.1016/j.pmatsci.2013.03.002).
-
3)
-
5. Cho, B., et al: ‘Electrical stability enhancement of the amorphous In–Ga–Zn–O thin film transistor by formation of Au nanoparticles on the back-channel surface’, Appl. Phys. Lett., 2013, 102, (10), p. 102108 (doi: 10.1063/1.4795536).
-
4)
-
6. Park, W.J., et al: ‘Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor’, Appl. Phys. Lett., 2008, 93, (8), p. 083508 (doi: 10.1063/1.2976309).
-
5)
-
4. Lim, W., Douglas, E.A., Kim, S.H., Norton, D.P., Pearton, S.J., Ren, F., Chang, W.H.: ‘Low-temperature-fabricated InGaZnO thin film transistors on polyimide clean-room tape’, Appl. Phys. Lett., 2008, 93, p. 252103 (doi: 10.1063/1.3054167).
-
6)
-
1. Ozgur, U., et al: ‘A comprehensive review of ZnO materials and devices’, J. Appl. Phys., 2005, 98, (4), p. 041301 (doi: 10.1063/1.1992666).
-
7)
-
7. Bhosle, V., Tiwari, A., Narayan, J.: ‘Electrical properties of transparent and conducting Ga doped ZnO’, J. Appl. Phys., 2006, 100, (3), p. 033713 (doi: 10.1063/1.2218466).
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