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A single-ended amplifier with a magnetic-coupled feedback embedded network is proposed and its small-signal equivalent circuit is analysed in detail. The embedded network cancels the effects of the gate–drain capacitor C gd and introduces negative resistance into the transistor drain, so that the maximum power gain of the transistor could be achieved. Based on this design methodology, a 142 GHz amplifier with 18.5 dB power gain and 7.9 mW DC power has been implemented in 65 nm CMOS.
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1. Seo, M., et al: ‘A 1.1 V 150 GHz amplifier with 8 dB gain and +6 dBm saturated output power in standard digital 65 nm CMOS using dummy-prefilled microstrip lines’. IEEE Int. Solid-State Circuits Conf., San Francisco, CA, USA, February 2009, pp. 484–485.
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2014.2822
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content/journals/10.1049/el.2014.2822
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142 GHz amplifier with 18.5 dB gain and 7.9 mW DC power in 65 nm CMOS