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Characterisation of THz emission from double-metal-patterned gallium–arsenide multiple emitters

Characterisation of THz emission from double-metal-patterned gallium–arsenide multiple emitters

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Multiplexed gallium–arsenide (GaAs)-based terahertz (THz) emitters fabricated with periodic double-metal structures are demonstrated and the effect of different metals on the THz output is investigated. THz emission originates from the lateral photo-Dember effect and from the different Schottky barrier heights of the chosen metal pair. The metal combinations used were Au–Al, Au–Pb and Cu–Cr. The emitters were characterised according to temperature and the highest peak-to-peak THz emission was achieved with the Cu–Cr metal pairing at 150 K.

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