Distributed feedback 3.27 µm diode lasers with continuous-wave output power above 15 mW at room temperature
- Author(s): R. Liang 1 ; T. Hosoda 1 ; L. Shterengas 1 ; A. Stein 2 ; M. Lu 2 ; G. Kipshidze 1 ; G. Belenky 1
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View affiliations
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Affiliations:
1:
Stony Brook University, Stony Brook, NY 11794, USA;
2: Brookhaven National Laboratory, Upton, NY 11973, USA
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Affiliations:
1:
Stony Brook University, Stony Brook, NY 11794, USA;
- Source:
Volume 50, Issue 19,
11 September 2014,
p.
1378 – 1380
DOI: 10.1049/el.2014.2733 , Print ISSN 0013-5194, Online ISSN 1350-911X
GaSb-based type-I quantum well laterally coupled distributed feedback diode lasers emitting in the methane absorption band near 3.27 µm were designed and fabricated. The first-order index grating with a period of 480 nm was defined by e-beam lithography and etched on both sides of 6 µm-wide shallow ridge waveguide. Coated 2 mm-long devices demonstrated stable continuous-wave single-frequency operation in a wide temperature range with an output power of 15 mW at +17°C and 40 mW at −20°C. The Bragg wavelength temperature tuning rate was ∼0.27 nm/K.
Inspec keywords: ridge waveguides; quantum well lasers; organic compounds; laser tuning; distributed feedback lasers; diffraction gratings; III-V semiconductors; electron beam lithography; gallium compounds
Other keywords: power 15 mW to 40 mW; wavelength 3.27 mum; e-beam lithography; Bragg wavelength temperature tuning rate; first-order index grating; methane absorption band; temperature 293 K to 298 K; continuous wave output power; type-I quantum well laterally coupled distributed feedback diode lasers; size 2 mm; GaSb; shallow ridge waveguide; temperature 17 degC to -20 degC
Subjects: Gratings, echelles; Design of specific laser systems; Lithography (semiconductor technology); Laser beam modulation, pulsing and switching; mode locking and tuning; Lasing action in semiconductors; Semiconductor lasers; Laser beam modulation, pulsing and switching; mode locking and tuning; Waveguides and microwave transmission lines
References
-
-
1)
- S. Forouhar , R.M. Briggs , C. Frez , K.J. Franz , A. Ksendzov . High-power laterally coupled distributed-feedback GaSb-based diode lasers at 2 μm wavelength. Appl. Phys. Lett. , 3
-
2)
-
15. Shterengas, L., Belenky, G.L., Gourevitch, A., Kim, J.G., Martinelli, R.U.: ‘Measurements of α-factor in 2–2.5 µm type-I In(Al)GaAsSb/GaSb high power diode lasers’, Appl. Phys. Lett., 2002, 81, (24), pp. 4517–4519 (doi: 10.1063/1.1528291).
-
-
3)
- L. Naehle , S. Belahsene , M. Edlinger , M. von Fischer , G. Boissier , P. Grech , G. Narcy , A. Vicet , Y. Rouillard , J. Koeth , L. Worschech . Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4 µm wavelength range around room temperature. Electron. Lett. , 1 , 46 - 47
-
4)
- B.W. Hakki , T.L. Paoli . Gain spectra in GaAs double-heterojunction injection lasers. J. Appl. Phys. , 3 , 1299 - 1306
-
5)
-
9. Gupta, J.A., Barrios, P.J., Lapointe, J., Aers, G.C., Storey, C., Waldron, P.: ‘Modal gain of 2.4 μm InGaAsSb–AlGaAsSb complex-coupled distributed-feedback lasers’, IEEE Photonics Technol. Lett., 2009, 21, (20), pp. 1532–1534 (doi: 10.1109/LPT.2009.2029244).
-
-
6)
-
2. Naehle, L., Zimmermann, C., Belahsene, S., Fischer, M., Boissier, G., Grech, P., Narcy, G., Lundqvist, S., Rouillard, Y., Koeth, J., Kamp, M., Worschech, L.: ‘Monolithic tunable GaSb-based lasers at 3.3 mm’, Electron. Lett., 2011, 47, (9), pp. 1092–1093 (doi: 10.1049/el.2011.1986).
-
-
7)
- T. Yamanaka , Y. Yoshikuni , K. Yokoyama , W. Lui , S. Seki . Theoretical study on enhanced differential gain and extremely reduced linewidth enhancement factor in quantum-well lasers. IEEE J. Quantum Electron. , 6 , 1609 - 1616
-
8)
- W.-Y. Choi , J.C. Chen , C.G. Fonstad . Evaluation of coupling coefficients for lateral-coupled distributed feedback lasers. Jpn. J. Appl. Phys. , 4654 - 4659
-
9)
-
1. Gupta, J.A., Bezinger, A., Barrios, P.J., Lapointe, J., Poitras, D., Waldron, P.: ‘High-resolution methane spectroscopy using InGaAsSb/AlInGaAsSb laterally-coupled index-grating distributed feedback laser diode at 3.23 µm’, Electron. Lett., 2012, 48, (8), pp. 396–397 (doi: 10.1049/el.2012.0109).
-
-
10)
-
4. Caffey, D., Day, T., Kim, C.S., Kim, M., Vurgaftman, I., Bewley, W.W., Lindle, J.R., Canedy, C.L., Abell, J., Meyer, J.R.: ‘Performance characteristics of a continuous-wave compact widely tunable external cavity interband cascade lasers’, Opt. Express, 2010, 18, (15), p. 15691 (doi: 10.1364/OE.18.015691).
-
-
11)
- J.A. Gupta , B.F. Ventrudo , P. Waldron , P.J. Barrios . External cavity tunable type-I diode laser with continuous-wave singlemode operation at 3.24 µm. Electron. Lett. , 17 , 1218 - 1219
-
12)
-
14. Belenky, G., Reynolds, C.L.Jr., Shterengas, L., Hybertsen, M.S., Donetsky, D.V., Shtengel, G.E., Luryi, S.: ‘Effect of p-doping on the temperature dependence of differential gain in FP and DFB 1.3 μm InGaAsP-InP multiple-quantum-well lasers’, IEEE Photonics Technol. Lett., 2000, 12, (8), pp. 969–971 (doi: 10.1109/68.867977).
-
-
13)
- T. Hosoda , G. Kipshidze , L. Shterengas , G. Belenky . Diode lasers emitting near 3.44 µm in continuous-wave regime at 300 K. Electron. Lett. , 21 , 1455 - 1457
-
14)
-
11. Henry, C.H.: ‘Performance of distributed feedback lasers designed to favor the energy gap mode’, IEEE J. Quantum Electron., 1985, 21, (12), pp. 1913–1918 (doi: 10.1109/JQE.1985.1072611).
-
-
15)
-
8. Liang, R., Shterengas, L., Hosoda, T., Stein, A., Lu, M., Kipshidze, G., Belenky, G.: ‘Diffraction limited 3.15 µm cascade diode lasers’. 72nd Device Research Conf. (DRC), Santa Barbara, CA, USA, June 2014, pp. 37–38.
-
-
1)
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