access icon free 3-T ISFET front-end utilising parasitic device capacitance

A 3-T ion sensitive field effect transistor (ISFET) chemical sensor that utilises the parasitic drain–gate capacitance of the device is proposed. It is compact and consumes extremely low power, and at the same time is immune to capacitive division. Additionally, it provides in-pixel amplification dependent on the ratio of passivation and feedback (parasitic) capacitance. The fabricated sensor achieves 200 mV/pH sensitivity using this amplification mechanism.

Inspec keywords: ion sensitive field effect transistors; chemical sensors

Other keywords: amplification mechanism; passivation ratio; parasitic drain-gate capacitance; in-pixel amplification; 3T ISFET front-end; ion sensitive field effect transistor; chemical sensor; feedback capacitance; parasitic device capacitance

Subjects: Chemical sensors; Insulated gate field effect transistors; Chemical sensors

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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2014.2488
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content/journals/10.1049/el.2014.2488
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