© The Institution of Engineering and Technology
A 3-T ion sensitive field effect transistor (ISFET) chemical sensor that utilises the parasitic drain–gate capacitance of the device is proposed. It is compact and consumes extremely low power, and at the same time is immune to capacitive division. Additionally, it provides in-pixel amplification dependent on the ratio of passivation and feedback (parasitic) capacitance. The fabricated sensor achieves 200 mV/pH sensitivity using this amplification mechanism.
References
-
-
1)
-
P. Georgiou ,
C. Toumazou
.
Isfet characteristics in cmos and their application to weak inversion operation.
Sens. Actuators B, Chem.
,
1 ,
211 -
217
-
2)
-
J. Bausells ,
J. Carrabina ,
A. Errachid ,
A. Merlos
.
Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology.
Sens. Actuators B
,
56 -
62
-
3)
-
5. Hu, Y., Georgiou, P.: ‘A robust ISFET pH-measuring front-end for chemical reaction monitoring’, IEEE Trans. Biomed. Circuits Syst., 2014, 8, (2), pp. 177–185 (doi: 10.1109/TBCAS.2014.2313512).
-
4)
-
3. Ravezzi, L., Conci, P.: ‘ISFET sensor coupled with CMOS read-out circuit microsystem’, Electron. Lett., 1998, 34, (23), pp. 2234–2235 (doi: 10.1049/el:19981532).
-
5)
-
4. Palán, B., Santos, F.V., Karam, J.M., Courtois, B., Husák, M.: ‘New ISFET sensor interface circuit for biomedical applications’, Sens. Actuators B, Chem., 1999, 57, (1–3), pp. 63–68 (doi: 10.1016/S0925-4005(99)00136-7).
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2014.2488
Related content
content/journals/10.1049/el.2014.2488
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Correspondence
This article has following corresponding article(s):
in brief