InAs/GaAs p–i–p quantum dots-in-a-well infrared photodetectors operating beyond 200 K
High-temperature operating performance of p–i–p quantum dots-in-a-well infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped self-assembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p–i–p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.