High-power in-phase coherently coupled VCSEL array based on proton implantation
- Author(s): Meng Xun 1 ; Chen Xu 1 ; Yiyang Xie 2 ; Yanxu Zhu 1 ; Mingming Mao 1 ; Kun Xu 1 ; Jun Wang 1 ; Jie Liu 1 ; Hongda Chen 2
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View affiliations
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Affiliations:
1:
The Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, People's Republic of China;
2: The State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Affiliations:
1:
The Key Laboratory of Optoelectronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, People's Republic of China;
- Source:
Volume 50, Issue 15,
17 July 2014,
p.
1085 – 1086
DOI: 10.1049/el.2014.1298 , Print ISSN 0013-5194, Online ISSN 1350-911X
Three-element in-phase coherently coupled arrays of vertical cavity surface-emitting lasers (VCSELs) were fabricated using proton implantation. The arrays show excellent beam quality with a far-field divergence of 4°, while maintaining a stable in-phase mode until a maximum output power of 4 mW under continuous-wave condition. The process for the arrays is simple and the cost is low.
Inspec keywords: optical fabrication; semiconductor quantum wells; quantum well lasers; gallium arsenide; III-V semiconductors; laser beams; laser cavity resonators; surface emitting lasers; aluminium compounds; semiconductor laser arrays; laser modes
Other keywords: stable in-phase mode; power 4 mW; beam quality; far-field divergence; vertical cavity surface emitting lasers; GaAs-Al0.3Ga0.7As quantum wells; GaAs-Al0.3Ga0.7As; output power; high-power in-phase coherently coupled VCSEL array; continuous-wave conditions; three-element in-phase coherently coupled arrays; proton implantation
Subjects: Laser resonators and cavities; Laser beam interactions and properties; Laser resonators and cavities; Lasing action in semiconductors; Optical fabrication, surface grinding; Laser beam characteristics and interactions; Semiconductor lasers; Design of specific laser systems
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