@ARTICLE{ iet:/content/journals/10.1049/el.2014.1056, author = {Minhao Yang}, affiliation = {Institute of Neuroinformatics, University of Zürich, and ETH Zürich, Zürich, Switzerland}, author = {Shih-Chii Liu}, affiliation = {Institute of Neuroinformatics, University of Zürich, and ETH Zürich, Zürich, Switzerland}, author = {Tobi Delbruck}, affiliation = {Institute of Neuroinformatics, University of Zürich, and ETH Zürich, Zürich, Switzerland}, keywords = {two-stage amplifier;INWE;small size effect;pseudocascode split-transistor technique;in-pixel amplification;power consumption;vision sensor;pseudocascode compensation;size 0.18 mum;inverse narrow-width effect;UMC standard CMOS process;metal-oxide semiconductor field effect transistor;reverse short-channel effect;MOSFET;subthreshold DC-gain enhancement;RSCE;}, ISSN = {0013-5194}, language = {English}, abstract = {A pseudo-cascode split-transistor technique is proposed for DC-gain enhancement of amplifiers in the subthreshold by exploiting the small size effects of metal–oxide semiconductor field effect transistors (MOSFETs) including the reverse short-channel effect and the inverse narrow-width effect. It requires no body-biasing and occupies a small area. A compact 114 μm2 two-stage amplifier with pseudo-cascode compensation for in-pixel amplification in vision sensors has been designed using the proposed technique. A total of 10 samples of split-transistors and amplifiers fabricated in an UMC 0.18 μm standard CMOS process were measured. More than half of the tested split-transistors show considerable DC-gain enhancement over a wide range of bias currents and nine amplifiers have increased DC gains larger than 85 dB at about 4 nA power consumption.}, title = {Subthreshold DC-gain enhancement by exploiting small size effects of MOSFETs}, journal = {Electronics Letters}, issue = {11}, volume = {50}, year = {2014}, month = {May}, pages = {835-837(2)}, publisher ={Institution of Engineering and Technology}, copyright = {© The Institution of Engineering and Technology}, url = {https://digital-library.theiet.org/;jsessionid=148ilak99ofe6.x-iet-live-01content/journals/10.1049/el.2014.1056} }