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Subthreshold DC-gain enhancement by exploiting small size effects of MOSFETs

Subthreshold DC-gain enhancement by exploiting small size effects of MOSFETs

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A pseudo-cascode split-transistor technique is proposed for DC-gain enhancement of amplifiers in the subthreshold by exploiting the small size effects of metal–oxide semiconductor field effect transistors (MOSFETs) including the reverse short-channel effect and the inverse narrow-width effect. It requires no body-biasing and occupies a small area. A compact 114 μm2 two-stage amplifier with pseudo-cascode compensation for in-pixel amplification in vision sensors has been designed using the proposed technique. A total of 10 samples of split-transistors and amplifiers fabricated in an UMC 0.18 μm standard CMOS process were measured. More than half of the tested split-transistors show considerable DC-gain enhancement over a wide range of bias currents and nine amplifiers have increased DC gains larger than 85 dB at about 4 nA power consumption.

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      • M. Yang .
        8. Yang, M., et al: ‘Comparison of spike encoding schemes in asynchronous vision sensors: modeling and design’. IEEE Int. Symp. Circuits Syst., Melbourne, Australia, June 2014.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2014.1056
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