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access icon openaccess Computational technique for probing terminal control mechanisms inside three-dimensional nano-scale MOSFET

This is an open access article published by the IET under the Creative Commons Attribution-NonCommercial-NoDerivs License
(http://creativecommons.org/licenses/by-nc-nd/3.0/)
Received 24/03/2014, Published 19/05/2014
Errata or comment

A novel computational technique is presented to study the terminal influence inside the three-dimensional (3D) nano-scale metal-oxide semiconductor field effect transistor (MOSFET) using TCAD simulations. Within the MOSFET the derivative of the electrostatic potential with respect to voltages at each terminal is taken, and when these derivatives are summed together they always sum to unity. It is found that these functions can be used to quantify the relative influence or control of the terminals anywhere inside the MOSFET, including the channel. The motivation for moving from planar MOSFETs to 3D-MOSFETs is to increase the gate control over the channel. The terminal influence functions quantify the notion of control. To gain insight into the working of a semiconductor device, different quantities like potential, charge or current density etc. may be visualised. These quantities are available in the standard TCAD tool-kit. However, these do not directly address the mechanism of terminal control. The terminal response or control functions can be used to do this very clearly.

Inspec keywords: MOSFET; semiconductor device models; nanoelectronics; three-dimensional integrated circuits; current density

Other keywords: planar MOSFET; charge density; gate control; control functions; electrostatic potential; probing terminal control mechanisms; 3D nanoscale MOSFET; metal-oxide semiconductor field effect transistor; terminal influence; current density; computational technique; terminal response; semiconductor device; TCAD simulations

Subjects: Insulated gate field effect transistors; Semiconductor device modelling, equivalent circuits, design and testing

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