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access icon openaccess Computational technique for probing terminal control mechanisms inside three-dimensional nano-scale MOSFET

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      • 1. Colinge, J.-P. (Ed.): ‘FinFETs and other multi-gate transistors’ (Springer, 2007) pp. 1–48.
    2. 2)
      • 2. James, D.: ‘Intel ivy bridge unveiled x2014; the first commercial tri-gate, high-k, metal-gate CPU’. 2012 IEEE in Custom Integrated Circuits Conf. (CICC), 2012, pp. 14.
    3. 3)
      • 3. Auth, C., et al: ‘A 22 nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors’. 2012 Symp. VLSI Technology (VLSIT), June 2012, pp. 131132.
    4. 4)
      • 4. Kavalieros, J., et al: ‘Tri-gate transistor architecture with high-k gate dielectrics, metal gates and strain engineering’. 2006 VLSI Technology Symp., Dig. Tech. Pprs, pp. 5051.
    5. 5)
      • 5. Synopsys: ‘TCAD sentaurus’ (Synopsys, Inc., 2011).
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