InAs nanowire MOSFET differential active mixer on Si-substrate

K.-M. Persson; M. Berg; H. Sjöland; E. Lind; L.-E. Wernersson

InAs nanowire MOSFET differential active mixer on Si-substrate

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Author(s): K.-M. Persson ¹ ; M. Berg ¹ ; H. Sjöland ¹ ; E. Lind ¹ ; L.-E. Wernersson ¹
- Affiliations: 1: Department of Electrical and Information Technologies, Lund University, Box 118 S-221 00, Lund, Sweden
Source: Volume 50, Issue 9, 24 April 2014, p. 682 – 683
DOI: 10.1049/el.2013.4219 , Print ISSN 0013-5194, Online ISSN 1350-911X

Received 22/12/2013, Published 11/04/2014

An active single balanced down-conversion mixer is implemented using InAs nanowire metal oxide semiconductor field effect transistors (MOSFETs) as both active devices and passive resistive loads. Circuits with 6 dB low-frequency voltage gain and a 3 dB bandwidth of 2 GHz are measured for a DC power consumption of 3.8 mW from a 1.5 V supply. The circuits are fabricated using contacts made with 12 μm-line-width optical lithography.

References

1. 1)
  - 4. Ghalamestani, S.G., Berg, M., Dick, K., Wernersson, L.E.: ‘High quality InAs and GaSb thin layers grown on Si (111)’, J. Crystal Growth, 2011, 332, (1), pp. 12–16 (doi: 10.1016/j.jcrysgro.2011.03.062).
2. 2)
  - 5. Persson, K.-M., Berg, M., Borg, M.B., Wu, J., Johansson, S., Svensson, J., Jansson, K., Lind, E., Wernersson, L.-E.: ‘Extrinsic and intrinsic performance of vertical InAs nanowire MOSFETs on Si substrates’, Electron Devices, IEEE Transactions, 2013, 60, (9), pp. 2761–2767 (doi: 10.1109/TED.2013.2272324).
3. 3)
  - C.P. Auth , J.D. Plummer . Scalling theory for cylindrical, fully-depleted, surrounding-gate MOSFETs. IEEE Electron Device Lett. , 2 , 74 - 76
4. 4)
  - 7. Yan, H., Choe, H.S., Nam, S.W., Hu, Y., Das, S., Klemic, J.F., Ellenbogen, J.C., Lieber, C.M.: ‘Programmable nanowire circuits for nanoprocessors’, Nature, 2011, 470, (7333), pp. 240–244 (doi: 10.1038/nature09749).
5. 5)
  - 2. Jansson, K., Lind, E., Wernersson, L.-E.: ‘Performance evaluation of III–V nanowire transistors’, IEEE Trans. Electron Devices, 2012, 59, (9), pp. 2375–2382 (doi: 10.1109/TED.2012.2204757).
6. 6)
  - 6. Takahashi, T., Takei, K., Adabi, E., Fan, Z., Niknejad, A.M., Javey, A.: ‘Parallel array InAs nanowire transistors for mechanically bendable, ultrahigh frequency electronics’, ACS Nano, 2010, 4, (10), pp. 5855–5860 (doi: 10.1021/nn1018329).
7. 7)
  - 9. Johansson, S., Berg, M., Persson, K.-M., Lind, E.: ‘A high-frequency transconductance method for characterization of high-κ border traps in III–V MOSFETs’, IEEE Trans. Electron Devices, 2013, 60, (2), pp. 776–781 (doi: 10.1109/TED.2012.2231867).
8. 8)
  - 1. Kim, D.-H., del Alamo, J.A., Antoniadis, D.A., Brar, B.: ‘Extraction of virtual-source injection velocity in sub-100 nm III–V HFETs’. IEEE Int. Electron Devices Meeting (IEDM), Baltimore, MD, USA, December 2009, pp. 35.4.1–35.4.4.
9. 9)
  - 8. Blekker, K., Richter, R., Oda, R., Taniyama, S., Benner, O., Keller, G., Münstermann, B., Lysov, A., Regolin, I., Waho, T., Prost, W.: ‘InAs nanowire circuits fabricated by field-assisted self-assembly on a host substrate’, IEICE Trans. Electron., 2012, 95, (8), pp. 1369–1375 (doi: 10.1587/transele.E95.C.1369).

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InAs nanowire MOSFET differential active mixer on Si-substrate

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