access icon free Highly sensitive seesaw capacitive pressure sensor based on SOI wafer

A novel microelectromechanical system capacitive pressure sensor with two wings, which amplify the mechanical deformation of the pressure sensing diaphragm and increase the sensor's sensitivity, is presented. This seesaw structure is available for both single and differential capacitive pressure sensors. To verify this design, a single capacitive pressure sensor is manufactured based on silicon on a insulator (SOI) wafer. The test result shows that this pressure sensor has a sensitivity of 7.75 fF/kPa.

Inspec keywords: microsensors; silicon; elemental semiconductors; diaphragms; silicon-on-insulator; capacitive sensors; pressure sensors; deformation

Other keywords: mechanical deformation; highly sensitive seesaw capacitive pressure sensor; silicon on insulator wafer; Si; microelectromechanical system; MEMS; diaphragm

Subjects: Microsensors and nanosensors; Pressure and vacuum measurement; Pressure measurement; Sensing and detecting devices; Micromechanical and nanomechanical devices and systems; Design and modelling of MEMS and NEMS devices

References

    1. 1)
    2. 2)
      • 1. Mastrangelo, C.H.: ‘Capacitive surface micromachined differential pressure sensor’. US Patent, 5332469, 1994.
    3. 3)
      • 3. Zhang, Y., Howver, R., Gogoi, B., Yazdi, N.: ‘A high-sensitive ultra-thin MEMS capacitive pressure sensor’. Int. Solid-State Sensors, Actuators and Microsystems Conf., TRANSDUCERS'11, Beijing, China, June 2011, pp. 112115, doi: 10.1109/TRANSDUCERS.2011.5969151.
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2013.4170
Loading

Related content

content/journals/10.1049/el.2013.4170
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading