access icon free Curvature-corrected low-noise sub-bandgap reference in 28 nm CMOS technology

A sub-bandgap circuit architecture employed to achieve a precision reference in 28 nm CMOS technology is described. The 500 mV voltage reference exhibits < 10 ppm/°C drift from −40 to 125°C and 5.5 μV of root-mean-square (RMS) noise in a 0.1–10 Hz bandwidth, dissipates 500 μW of power on a 1.2 V supply and occupies 0.09 mm².

Inspec keywords: CMOS integrated circuits; reference circuits

Other keywords: precision reference; power 500 muW; bandwidth 0.1 Hz to 10 Hz; curvature-corrected low-noise sub-bandgap reference; temperature -40 degC to 125 degC; voltage 500 mV; sub-bandgap circuit architecture; voltage 5.5 muV; root-mean-square noise; voltage 1.2 V; size 28 nm; RMS noise; CMOS technology

Subjects: CMOS integrated circuits; Power electronics, supply and supervisory circuits

References

    1. 1)
    2. 2)
      • 2. Annema, A.J.: ‘A 0.0025 mm² bandgap voltage reference for 1.1 V supply in standard 0.16 µm CMOS’. IEEE Int. Solid-State Circuits Conf. (ISSCC), San Francisco, USA, 19–23 February 2012, pp. 364366.
    3. 3)
    4. 4)
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2013.3952
Loading

Related content

content/journals/10.1049/el.2013.3952
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading