© The Institution of Engineering and Technology
By integrating triple terahertz quantum cascade lasers (at ∼3.25 THz) monolithically into an array, a peak power of 213 mW is obtained at 10 K with a threshold current density of only 257 A/cm2. The device shows distinct single-lobe far-field behaviour in the temperature range from 10 to 90 K, with a full-width at half-maximum of 36°. The highest operating temperature of the array laser is identical to that of the single ridge laser, indicating good heat dissipation design in the array. These results are promising for realising high power THz quantum cascade lasers.
References
-
-
1)
-
8. Kao, T.Y., Hu, Q., Reno, J.L.: ‘Phase-locked arrays of surface-emitting terahertz quantum cascade lasers’, Appl. Phys. Lett., 2010, 96, p. 101106 (doi: 10.1063/1.3358134).
-
2)
-
9. Kapon, E., Lindsey, C., Katz, J., Margalit, S., Yariv, A.: ‘Chirped arrays of diode lasers for supermode control’, Appl. Phys. Lett., 1984, 45, pp. 200–202 (doi: 10.1063/1.95209).
-
3)
-
7. de Naurois, G.M., Carras, M., Maisons, G., Marcadet, X.: ‘Effect of emitter number on quantum cascade laser monolithic phased array’, Opt. Lett., 2012, 37, pp. 425–427 (doi: 10.1364/OL.37.000425).
-
4)
-
6. Williams, B.S., Kumar, S., Hu, Q., Reno, J.L.: ‘High-power terahertz quantum cascade lasers’, Electron. Lett., 2006, 42, pp. 89–90 (doi: 10.1049/el:20063921).
-
5)
-
5. Xu, G., Colombelli, R., Khanna, S.P., Belarouci, A., Letartre, X., Li, L., Linfield, E.H., Davies, A.G., Beere, H.E., Ritchie, D.A.: ‘Efficient power extraction in surface-emitting semiconductor lasers using graded photonic heterostructures’, Nat. Commun., 2012, 3, p. 952, (doi: 10.1038/ncomms1958).
-
6)
-
10. Liu, J.Q., Chen, J.Y., Liu, F.Q., Li, L., Wang, L.J., Wang, Z.G.: ‘Terahertz quantum cascade laser operating at 2.94 THz’, Chin. Phys. Lett., 2010, 27, p. 104205 (doi: 10.1088/0256-307X/27/10/104205).
-
7)
-
1. Kohler, R., Tredicucci, A., Beltram, F., Beere, F.H.E., Linfield, E.H., Davies, A.G., Ritchie, D.A., Iotti, R.C., Rossi, F.: ‘Terahertz semiconductor-heterostructure laser’, Nature, 2002, 417, pp. 156–159 (doi: 10.1038/417156a).
-
8)
-
2. Siegel, P.H.: ‘Terahertz technology’, IEEE Trans. Microw. Theory Tech., 2002, 50, pp. 910–928 (doi: 10.1109/22.989974).
-
9)
-
4. Lee, A.M., Qin, Q., Kumar, S., Williams, B., Hu, Q., Reno, J.: ‘Realtime terahertz imaging over a standoff distance (>25 meters)’, Appl. Phys. Lett., 2006, 89, p. 141125 (doi: 10.1063/1.2360210).
-
10)
-
11. Wang, T., Liu, J.Q., Chen, J.Y., Liu, Y.H., Liu, F.Q., Wang, L.J., Wang, Z.G.: ‘Continuous-wave operation of terahertz quantum cascade lasers at 3.2 THz’, Chin. Phys. Lett., 2013, 30, p. 064201 (doi: 10.1088/0256-307X/30/6/064201).
-
11)
-
3. Gao, J.R., Hovenier, J.N., Yang, Z.Q., Baselmans, J.J.A., Baryshev, A., Hajenius, M., Klapwijk, T.M., Adam, A.J.L., Klaassen, T.O., Williams, B.S., Kumar, S., Hu, Q., Reno, J.L.: ‘Terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer’, Appl. Phys. Lett., 2005, 86, p. 244104 (doi: 10.1063/1.1949724).
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