High-voltage RESURF AlGaN/GaN high electron mobility transistor with back electrode

View Fulltext

Author(s): Ziqi Zhao ¹ ; Ziyu Zhao ² ; Qian Luo ³ ; Jiangfeng Du ³
- Affiliations: 1: Faculty of Science, Ningbo University, Ningbo 315211, People's Republic of China;
  2: Photonics Center, School of Physics, Nankai University, Tianjin 300071, People's Republic of China;
  3: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
Source: Volume 49, Issue 25, 05 December 2013, p. 1638 – 1640
DOI: 10.1049/el.2013.3366 , Print ISSN 0013-5194, Online ISSN 1350-911X

A novel reduced surface field (RESURF) AlGaN/GaN high electron mobility transistor (HEMT) with back electrode is proposed. The back electrode is electrically grounded and attached to the AlN nucleation layer after the substrate is removed. The back electrode, which attracts the electric field lines at the AlGaN/GaN interface by inducing negative charges, leads to a more uniform horizontal electric field along the channel and, hence, a significant improvement in breakdown voltage. Meanwhile, there is negligible negative impact on the ON-state resistance. Numerical simulation demonstrates a breakdown voltage of 1701 V and an ON-state resistance of 10.45 Ω mm with a gate–drain spacing of 6 μm for the proposed device, compared to a breakdown voltage of 1118 V and an ON-state resistance of 10.34 Ω mm for conventional RESURF AlGaN/GaN HEMT.

References

1. 1)
  - 2. Hilt, O., Knauer, A., Brunner, F., Bahat-Treidel, E., Würfl, J.: ‘Normally-off AlGaN/GaN HFET with p-type GaN gate and AlGaN buffer’. Int. Symp. Power Semiconductor Devices & IC's, Hiroshima, Japan, 2010, pp. 347–350.
2. 2)
  - 5. Huang, W., Chow, T.P., Niiyama, Y., Nomura, T., Yoshida, S.: ‘Lateral implanted RESURF GaN MOSFETs with BV up to 2.5 kV’. Int. Symp. Power Semiconductor Devices and IC's, Orlando, Florida, 2008, pp. 291–294.
3. 3)
  - 3. Bahat-Treidel, E., Brunner, F., Hilt, O., Cho, E., Würfl, J., Trankle, G.: ‘AlGaN/GaN/GaN:C back-barrier HFETs with breakdown voltage of over 1 kV and low RON × A’, IEEE Trans. Electron Devices, 2010, 57, (11), pp. 3050–3058 (doi: 10.1109/TED.2010.2069566).
4. 4)
  - 1. Deguchi, T., Kamada, A., Yamashita, M., Tomita, H., Arai, M., Yamasaki, K., Egawa, T.: ‘High-voltage AlGaN/GaN HFETs by using graded gate field plates’, Electron. Lett., 2012, 48, (2), pp. 109–110 (doi: 10.1049/el.2011.3171).
5. 5)
  - 8. Fan, Z.Y., Li, J., Nakarmi, M.L., Lin, J.Y., Jiang, H.X.: ‘AlGaN/GaN/AlN quantum-well field-effect transistors with highly resistive AlN epilayers’, Appl. Phys. Lett., 2006, 88, (7), pp. 073513 (doi: 10.1063/1.2174847).
6. 6)
  - 6. Huang, W.X., Chow, T.P., Niiyama, Y., Nomura, T., Yoshida, S.: ‘Experimental demonstration of novel high-voltage epilayer RESURF GaN MOSFET’, IEEE Elecron Devices Lett., 2009, 30, (10), pp. 1018–1020 (doi: 10.1109/LED.2009.2027820).
7. 7)
  - 7. Fang, Z.Q., Claflin, B., Look, D.C., Green, D.S., Vetury, R.: ‘Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: effect of carbon concentration in GaN buffer layers’, J. Appl. Phys., 2010, 108, (6), pp. 063706 (doi: 10.1063/1.3488610).
8. 8)
  - 4. Karmalkar, S., Deng, J., Shur, M.S.: ‘RESURF AlGaN/GaN HEMT for high voltage power switching’, IEEE Electron Device Lett., 2002, 22, (8), pp. 373–375 (doi: 10.1109/55.936347).

High-voltage RESURF AlGaN/GaN high electron mobility transistor with back electrode

References

Related content