Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

access icon free 300 GHz InP HBT amplifier with 10 mW output power

A high-power terahertz solid-state amplifier fabricated using 0.25 μm InP heterojunction bipolar transistor (HBT) technology is reported. This amplifier utilies a novel defective-ground four-way balun to combine differential amplifier chains for a total output device periphery of 40 μm. A significant amount of power of ∼10 mW is obtained at 305 GHz with better than 20 dB small-signal gain.

References

    1. 1)
    2. 2)
    3. 3)
    4. 4)
      • 1. Albrecht, J.D., Rosker, M.J., Wallace, H.B., Chang, T.-H. : ‘THz electronics projects at DARPA: transistors, TMICs, and amplifiers’. IEEE MTT-S Int. Microwave Symp., Anaheim, CA, USA, May 2010, pp. 11181121.
    5. 5)
      • 2. Kreischer, K.E., Tucek, J.C., Basten, M.A., Gallagher, D.A.: ‘220 GHz power amplifier testing at Northrop Grumman’. IEEE 14th Int. Vacuum Electron. Conf. (IVEC), Paris, France, May 2013.
    6. 6)
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2013.3288
Loading

Related content

content/journals/10.1049/el.2013.3288
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address