access icon free 74 GHz, 17.2 dBm power amplifier in 45 nm SOI CMOS

© The Institution of Engineering and Technology
Received 04/04/2013, Published

A millimetre-wave power amplifier (PA) fabricated in 45 nm SOI CMOS is reported that achieves 17.2 dBm saturated output power at 74 GHz without power combining using a 2.2 V supply, over twice the output power of previously reported single CMOS PAs. The peak gain and PAE are 14.3 dB and 11.1%, respectively. The PA also achieves a 3 dB bandwidth of 31 GHz while occupying a small die area of 0.23 mm2.

Inspec keywords: field effect MIMIC; CMOS integrated circuits; millimetre wave power amplifiers; silicon-on-insulator

Other keywords: Si; SOI CMOS; millimetre-wave power amplifier; voltage 2.2 V; frequency 74 GHz; bandwidth 31 GHz; single CMOS power amplifier; size 45 nm

Subjects: CMOS integrated circuits; Microwave integrated circuits; Amplifiers

References

    1. 1)
      • 5. Wang, K.-Y., Chang, T.-Y., Wang, C.-K.: ‘A 1V 19.3dBm 79GHz power amplifier in 65nm CMOS’. ISSCC Dig. Tech. Pprs, San Francisco, CA, USA, February 2012, pp. 260–261.
    2. 2)
      • 2. Chan, D., Feng, M.: ‘A compact W-band CMOS power amplifier with gain boosting and short-circuited stub matching for high power and high efficiency operation’,IEEE Microw. Wirel. Compon. Lett., 2011, 21, (2), pp. 98–100.
    3. 3)
      • 1. Lee, J., Li, Y.-A., Hung, M.-H., Huang, S.-J.: ‘A fully-integrated 77-GHz FMCW radar transceiver in 65-nm CMOS technology’,IEEE J. Solid-State Circuits, 2010, 45, (12), pp. 2746–2756 (doi: 10.1109/JSSC.2010.2075250).
    4. 4)
      • 3. Kurita, N., Kondoh, H.: ‘60GHz and 80GHz wide band power amplifier MMICs in 90nm CMOS technology.’Proc. IEEE Radio Frequency and Integrated Circuits (RFIC) Symp., Anaheim, CA, USA, June 2010, pp. 39–42.
    5. 5)
      • 4. Kim, J., Dabag, H., Asbeck, P., Buckwalter, J.F.: ‘Q-band and W-band power amplifiers in 45-nm CMOS SOI’,IEEE Trans. Microw. Theory Tech., 2012, 60, (6), pp. 1870–1877 (doi: 10.1109/TMTT.2012.2193593).
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