%0 Electronic Article %A R. Ren %+ School of Electronic Engineering and Optoelectronic Techniques, Nanjing University of Science & Technology, Nanjing 210094, People's Republic China %A Y.X. Guo %+ Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576, Singapore %A J. Wang %+ Institute of Microelectronics, Agency for Science, Technology and Research, 11 Science Park Road, Singapore Science Park II, 117685, Singapore %A R.H. Zhu %+ School of Electronic Engineering and Optoelectronic Techniques, Nanjing University of Science & Technology, Nanjing 210094, People's Republic China %K control device %K spectral response %K fill factor %K power conversion efficiency %K efficiency enhancement %K passivated radial junction nanowire surface decoration %K numerical simulation %K Si-NiSi %K silicon solar cell model %K submerged nickel-silicide contact %K open circuit voltage %K finite-difference time-domain method %K short circuit current density %X Presented is a silicon solar cell model with fully passivated radial junction nanowire surface decoration and submerged nickel-silicide contact. Numerical simulations using a finite-difference time-domain method have been done to investigate the spectral responses of the solar cell model. The experimental results indicate that, with proper nickel-silicide thickness, the fill factor of the cell can be improved considerably without much degradation on short circuit current density. Under AM 1.5G illumination, the silicon nanowire solar cell device with 50 Å nickel-silicide contact has short circuit current density of 26.3 mA/cm2, open circuit voltage of 586 mV and fill factor of 70.0%, contributing to power conversion efficiency of 10.8%, which is 19% higher than the control device without the nickel-silicide contact. %@ 0013-5194 %T Fully passivated radial junction nanowire silicon solar cells with submerged nickel-silicide contact for efficiency enhancement %B Electronics Letters %D June 2013 %V 49 %N 12 %P 767-769 %I Institution of Engineering and Technology %U https://digital-library.theiet.org/;jsessionid=vwsyblwcw611.x-iet-live-01content/journals/10.1049/el.2013.0998 %G EN