RT Journal Article
A1 A. Ramesh
AD Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
A1 F. Ren
AD Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
A1 P.R. Berger
AD Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
A1 P. Casal
AD Department of Chemical and Biomolecular Engineering, The Ohio State University, Columbus, OH 43210, USA
A1 A. Theiss
AD Department of Chemical and Biomolecular Engineering, The Ohio State University, Columbus, OH 43210, USA
A1 S. Gupta
AD Department of Chemical and Biomolecular Engineering, The Ohio State University, Columbus, OH 43210, USA
A1 S.C. Lee
AD Department of Chemical and Biomolecular Engineering, The Ohio State University, Columbus, OH 43210, USA

PB iet
T1 Towards in vivo biosensors for low-cost protein sensing
JN Electronics Letters
VO 49
IS 7
SP 450
OP 451
AB In vivo biosensing requires stable transistor operation in high-salt concentration bodily fluids while exhibiting impermeability to mobile alkali ions that would otherwise render the metal-oxide-semiconductor (MOS) threshold voltage to drift. Metal oxide semiconductor capacitor structures using Al2O3 as the gate dielectric were soaked in a sterile physiological buffer solution (PBS) up to 24 hours and for thicknesses from 100 to 10 nm. The triangular voltage sweep technique characterised alkali ion penetration, and measured no detectable alkali ions for the Al2O3 capacitors. By contrast, the dose of alkali ions in silicon dioxide MOS capacitors steadily increased with increasing soak times in the PBS solution.
K1 alkali ion dose
K1 in vivo biosensors
K1 mobile alkali ions
K1 PBS solution
K1 Al2O3 capacitors
K1 size 100 nm to 10 nm
K1 threshold voltage
K1 metal oxide semiconductor capacitor
K1 triangular voltage sweep technique
K1 transistor operation
K1 detectable alkali ions
K1 silicon dioxide MOS capacitors
K1 sterile physiological buffer solution
K1 protein sensing
K1 alkali ion penetration
K1 SiO2
K1 metal-oxide-semiconductor
K1 gate dielectric
K1 high-salt concentration bodily fluids
K1 impermeability
DO https://doi.org/10.1049/el.2012.4283
UL https://digital-library.theiet.org/;jsessionid=1q01xb6eqmz17.x-iet-live-01content/journals/10.1049/el.2012.4283
LA English
SN 0013-5194
YR 2013
OL EN