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1887

access icon free EMI susceptibility of DTMOS opamps

© The Institution of Engineering and Technology
Received 09/11/2012, Published

The susceptibility to electromagnetic interference (EMI) of an amplifier based on dynamic threshold voltage MOS transistors (DTMOSs) has been analysed and improved thanks to an easy modification of the input differential stage. The final opamp has been designed in a 0.18μm standard CMOS process.

Inspec keywords: operational amplifiers; magnetic susceptibility; electromagnetic interference; MOSFET; CMOS analogue integrated circuits

Other keywords: final opamp; EMI susceptibility; size 0.18 mum; DTMOS opamps; electromagnetic interferences; dynamic threshold voltage MOS transistors; input differential stage; standard CMOS process

Subjects: Amplifiers; CMOS integrated circuits; Insulated gate field effect transistors; Electromagnetic compatibility and interference

References

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