@ARTICLE{ iet:/content/journals/10.1049/el.2012.3759, author = {D. Davies}, keywords = {III-nitride materials;temperature stability;microwave integrated circuit;radiation hardness;US researchers;RF power limiters;}, ISSN = {0013-5194}, language = {English}, abstract = {US researchers report new RF power limiters based on III-Nitride materials that have unprecedented high operating voltages, excellent temperature stability and radiation hardness. Fully planar and simple to fabricate, these limiters could be used in nearly any type of microwave integrated circuit.}, title = {Shifting boundaries}, journal = {Electronics Letters}, issue = {23}, volume = {48}, year = {2012}, month = {November}, pages = {1439-1439(0)}, publisher ={Institution of Engineering and Technology}, copyright = {© The Institution of Engineering and Technology}, url = {https://digital-library.theiet.org/;jsessionid=b150f92g7cru6.x-iet-live-01content/journals/10.1049/el.2012.3759} }