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Abstract

US researchers report new RF power limiters based on III-Nitride materials that have unprecedented high operating voltages, excellent temperature stability and radiation hardness. Fully planar and simple to fabricate, these limiters could be used in nearly any type of microwave integrated circuit.

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content/journals/10.1049/el.2012.3759
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This article has the following associated article(s):
RF power limiter using capacitively-coupled contacts III-nitride varactor
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