RT Journal Article
A1 T. Shen
AD Department of Electrical and Computer Engineering, Illinois Institute of Technology, Chicago, IL 60616, USA
A1 Z. Hu
AD Department of Electrical and Computer Engineering, Illinois Institute of Technology, Chicago, IL 60616, USA
A1 T. Wong
AD Department of Electrical and Computer Engineering, Illinois Institute of Technology, Chicago, IL 60616, USA

PB iet
T1 Transport-based equivalent circuit for semiconductor nanoparticle in terahertz frequency range
JN Electronics Letters
VO 49
IS 1
SP 52
OP 54
AB By consideration of the physical process of charge carrier motion and lattice polarisation, an equivalent circuit for a semiconductor nano-particle in the terahertz frequency range is obtained. All circuit elements are of electrical nature and can be directly expressed in terms of material parameters. When the generalised admittance of the circuit is multiplied by the intensity of an externally applied field, the total induced dipole moment of the nanoparticle results, which is in good match to that given by field analysis and simulation. The readily obtained polarisability can serve as the basis of analysis for composite structures and aggregates of which the nanoparticle is a constituent.
K1 composite structures
K1 circuit elements
K1 generalised admittance
K1 total induced dipole moment
K1 semiconductor nanoparticle
K1 charge carrier motion
K1 lattice polarisation
K1 terahertz frequency range
K1 aggregation
K1 electrical property
DO https://doi.org/10.1049/el.2012.3358
UL https://digital-library.theiet.org/;jsessionid=5kdgonb0jirdo.x-iet-live-01content/journals/10.1049/el.2012.3358
LA English
SN 0013-5194
YR 2013
OL EN