Low-cost, CMOS compatible, Ta2O5-based hemi-memristor for neuromorphic circuits

Buy article PDF
© The Institution of Engineering and Technology
Published 14/11/2012

Abstract

In the past, tantalum oxide devices have been used to create non-volatile digital memories, whilst neglecting the analogue memristive characteristics of such devices. In this Letter, it is shown that these devices can provide a low-cost, low-power solution for hemi-memristive devices, when used in their pre-formed, memristive region, whilst being fully CMOS compatible. Furthermore, measurements are presented from the devices that have been fabricated and it is shown that these devices do not require electroforming. Electroforming circuitry takes up valuable chip space at the transistor layers and significantly increases fabrication cost, since voltages as high as 12 V are required, which in turn requires extra masks to form high voltage devices and distribution circuits.

Inspec keywords: low-power electronics; neural chips; CMOS integrated circuits; tantalum compounds; memristors

Other keywords: Ta2O5; electroforming circuitry; distribution circuits; tantalum oxide devices; high voltage devices; nonvolatile digital memories; low-cost CMOS compatible based hemi-memristor; neuromorphic circuits; analogue memristive characteristics; low-cost low-power solution; transistor layers; hemi-memristive devices

Subjects: Resistors; Neural nets (circuit implementations); CMOS integrated circuits

References

    1. 1)
    2. 2)
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
      • Meng, D.: `Thermal failure mechanism and voltammetry metrology for Cu/barrier/low K integration', 2006, Ph.D., The University of Texas at Arlington
    8. 8)
      • Pérez-Carrasco, J.A., Zamarreño-Ramos, C., Serrano-Gotarredona, T., Linares-Barranco, B.: `On neuromorphic spiking architectures for asynchronous STDP memristive systems', Proc. IEEE Int. Circuits and Systems (ISCAS) Symp., 2010, Paris, France, p. 1659–1662
    9. 9)
Print this page
This is a required field
Please enter a valid email address