@ARTICLE{ iet:/content/journals/10.1049/el.2012.3180, author = {V. Jayaraman}, author = {G.D. Cole}, author = {M. Robertson}, author = {C. Burgner}, author = {D. John}, author = {A. Uddin}, author = {A. Cable}, keywords = {MEMS;wavelength 100 nm;GaAs-AlxOy;InGaAs;bottom mirror;wavelength 1060 nm;wavelength 90 nm;VCSEL;dielectric top mirror;ophthalmic swept-source optical coherence tomography;multiple quantum well;microelectromechanical-systems-based tunable vertical-cavity surface-emitting lasers;tunable lasers;wavelength 850 nm;}, ISSN = {0013-5194}, language = {English}, abstract = {Demonstrated are 1060 nm microelectromechanical-systems-based tunable vertical-cavity surface-emitting lasers (MEMS-VCSELs) with a 100 nm continuous tuning range under repetitively scanned operation at rates beyond 500 kHz and a 90 nm continuous tuning range under static operation. These devices employ a thin strained InGaAs multiple quantum well active region integrated with a fully oxidised GaAs/AlxOy bottom mirror and a suspended dielectric top mirror. The devices are optically pumped via 850 nm light. These ultra-widely tunable lasers represent the first MEMS-VCSELs reported in this wavelength range, and are ideally suited for application in ophthalmic swept-source optical coherence tomography.}, title = {Rapidly swept, ultra-widely-tunable 1060 nm MEMS-VCSELs}, journal = {Electronics Letters}, issue = {21}, volume = {48}, year = {2012}, month = {October}, pages = {1331-1333(2)}, publisher ={Institution of Engineering and Technology}, copyright = {© The Institution of Engineering and Technology}, url = {https://digital-library.theiet.org/;jsessionid=4jlgp2f7k0hlw.x-iet-live-01content/journals/10.1049/el.2012.3180} }