RT Journal Article
A1 D.-H. Kim
A1 P. Chen
A1 T.-W. Kim
A1 M. Urteaga
A1 B. Brar

PB iet
T1 Lg=100 nm InAs PHEMTs on InP substrate with record high frequency response
JN Electronics Letters
VO 48
IS 21
SP 1352
OP 1353
AB A report is presented on 100 nm and 200 nm InAs PHEMTs on an InP substrate with a record fT performance. This result was obtained by reducing a parasitic delay associated with the extrinsic gate capacitances of the device, as well as by using an InAs sub-channel to improve carrier transport properties. In particular, a 100 nm InAs PHEMT exhibits excellent performance, such as gm,max=2 S/mm, fT=421 GHz and fmax=620 GHz at VDS=0.7 V. The device also shows a well-balanced fT and fmax in excess of 400 GHz, even at VDS=0.5 V. In addition, the device gains about 70 % improvement in fT as Lg shrinks down from 200 to 100 nm. The results obtained in this work should make this technology of great interest to a multiplicity of applications and guide a realistic path in trying to achieve a 1 THz fT from III-V HEMTs in the future.
K1 parasitic delay
K1 frequency 421 GHz
K1 high electron mobility transistors
K1 extrinsic gate capacitances
K1 frequency 620 GHz
K1 voltage 0.7 V
K1 size 200 mm
K1 frequency 1 THz
K1 InAs-InP
K1 high frequency response
K1 size 100 mm
K1 carrier transport
K1 PHEMT
K1 voltage 0.5 V
DO https://doi.org/10.1049/el.2012.2699
UL https://digital-library.theiet.org/;jsessionid=19b851omadnoh.x-iet-live-01content/journals/10.1049/el.2012.2699
LA English
SN 0013-5194
YR 2012
OL EN