%0 Electronic Article %A D.-H. Kim %A P. Chen %A T.-W. Kim %A M. Urteaga %A B. Brar %K parasitic delay %K frequency 421 GHz %K high electron mobility transistors %K extrinsic gate capacitances %K frequency 620 GHz %K voltage 0.7 V %K size 200 mm %K frequency 1 THz %K InAs-InP %K high frequency response %K size 100 mm %K carrier transport %K PHEMT %K voltage 0.5 V %X A report is presented on 100 nm and 200 nm InAs PHEMTs on an InP substrate with a record fT performance. This result was obtained by reducing a parasitic delay associated with the extrinsic gate capacitances of the device, as well as by using an InAs sub-channel to improve carrier transport properties. In particular, a 100 nm InAs PHEMT exhibits excellent performance, such as gm,max=2 S/mm, fT=421 GHz and fmax=620 GHz at VDS=0.7 V. The device also shows a well-balanced fT and fmax in excess of 400 GHz, even at VDS=0.5 V. In addition, the device gains about 70 % improvement in fT as Lg shrinks down from 200 to 100 nm. The results obtained in this work should make this technology of great interest to a multiplicity of applications and guide a realistic path in trying to achieve a 1 THz fT from III-V HEMTs in the future. %@ 0013-5194 %T Lg=100 nm InAs PHEMTs on InP substrate with record high frequency response %B Electronics Letters %D October 2012 %V 48 %N 21 %P 1352-1353 %I Institution of Engineering and Technology %U https://digital-library.theiet.org/;jsessionid=1mgrlc1461wfu.x-iet-live-01content/journals/10.1049/el.2012.2699 %G EN