@ARTICLE{ iet:/content/journals/10.1049/el.2012.2699, author = {D.-H. Kim}, author = {P. Chen}, author = {T.-W. Kim}, author = {M. Urteaga}, author = {B. Brar}, keywords = {parasitic delay;frequency 421 GHz;high electron mobility transistors;extrinsic gate capacitances;frequency 620 GHz;voltage 0.7 V;size 200 mm;frequency 1 THz;InAs-InP;high frequency response;size 100 mm;carrier transport;PHEMT;voltage 0.5 V;}, ISSN = {0013-5194}, language = {English}, abstract = {A report is presented on 100 nm and 200 nm InAs PHEMTs on an InP substrate with a record fT performance. This result was obtained by reducing a parasitic delay associated with the extrinsic gate capacitances of the device, as well as by using an InAs sub-channel to improve carrier transport properties. In particular, a 100 nm InAs PHEMT exhibits excellent performance, such as gm,max=2 S/mm, fT=421 GHz and fmax=620 GHz at VDS=0.7 V. The device also shows a well-balanced fT and fmax in excess of 400 GHz, even at VDS=0.5 V. In addition, the device gains about 70 % improvement in fT as Lg shrinks down from 200 to 100 nm. The results obtained in this work should make this technology of great interest to a multiplicity of applications and guide a realistic path in trying to achieve a 1 THz fT from III-V HEMTs in the future.}, title = {Lg=100 nm InAs PHEMTs on InP substrate with record high frequency response}, journal = {Electronics Letters}, issue = {21}, volume = {48}, year = {2012}, month = {October}, pages = {1352-1353(1)}, publisher ={Institution of Engineering and Technology}, copyright = {© The Institution of Engineering and Technology}, url = {https://digital-library.theiet.org/;jsessionid=rcvtk0cr1kys.x-iet-live-01content/journals/10.1049/el.2012.2699} }