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Lg=100 nm InAs PHEMTs on InP substrate with record high frequency response

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Abstract

A report is presented on 100 nm and 200 nm InAs PHEMTs on an InP substrate with a record fT performance. This result was obtained by reducing a parasitic delay associated with the extrinsic gate capacitances of the device, as well as by using an InAs sub-channel to improve carrier transport properties. In particular, a 100 nm InAs PHEMT exhibits excellent performance, such as gm,max=2 S/mm, fT=421 GHz and fmax=620 GHz at VDS=0.7 V. The device also shows a well-balanced fT and fmax in excess of 400 GHz, even at VDS=0.5 V. In addition, the device gains about 70 % improvement in fT as Lg shrinks down from 200 to 100 nm. The results obtained in this work should make this technology of great interest to a multiplicity of applications and guide a realistic path in trying to achieve a 1 THz fT from III-V HEMTs in the future.

References

    1. 1)
      • 1 onward link is available for this reference.
      • CrossRef
    2. 2)
      • R. Lai , X.B. Mei , W.R. Deal , W. Yoshida , Y.M. Kim , P.H. Liu , J. Lee , J. Uyeda , V. Radisic , M. Lange , T. Gaier , L. Samoska , A. Fung . (2007) Sub 50 nm InP HEMT device with f.
    3. 3)
      • D.-H. Kim , B. Brar , J.A. del Alamo . (2011) f, Int. Electron Devices Meeting, (IEDM).
    4. 4)
      • T.-W. Kim , D.-H. Kim , S.D. Park , S.H. Shin , G.Y. Yeom , J.H. Jang , J.-I. Song . (2008) Enhancement-mode 130 nm InAs p-HEMTs having f, IEEE Device Research Conf..
    5. 5)
      • 1 onward link is available for this reference.
      • CrossRef
    6. 6)
      • 1 onward link is available for this reference.
      • CrossRef
    7. 7)
      • H. Matsuzaki , T. Maruyama , T. Kosugi , H. Takahashi , M. Tokumitsu , T. Enoki . (2005) Laterally scaled down tiered-edge ohmic structure of InP-based HEMTs for 2-S/mm g, Int. Electron Devices Meeting (IEDM).
    8. 8)
      • S.-J. Yeon , M.-H. Park , J. Choi , K.-S. Seo . (2007) 610 GHz InAlAs/In, Int. Electron Devices Meeting, (IEDM).
    9. 9)
      • 1 onward link is available for this reference.
      • CrossRef
    10. 10)
      • A. Leuther , A. Tessmann , H. Massier , R. Losch , M. Schlechtweg , M. Mikulla , O. Ambacher . (2008) 35 nm metamorphic HEMT MMIC Technology, Int. Conf. on Indium Phosphide and Related Materials (IPRM).

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content/journals/10.1049/el.2012.2699
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