200 GHz 1 W semiconductor disc laser emitting 800 fs pulses
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- Author(s): E.J. Saarinen 1 ; A. Rantamäki 1 ; A. Chamorovskiy 1 ; O.G. Okhotnikov 1
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View affiliations
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Affiliations:
1:
Optoelectronics Research Centre,
Tampere University of Technology
, Finland
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Affiliations:
1:
Optoelectronics Research Centre,
Tampere University of Technology
, Finland
- Source: Electronics Letters, Volume 48, Issue 21, 11 October 2012, p. 1355 – 1357, DOI: 10.1049/el.2012.2443, Print ISSN 0013-5194, Online ISSN 1350-911X
Abstract
Passive harmonic modelocking in a flip-chip semiconductor disc laser at a 193 GHz repetition rate with 900 mW of output power and a pulse duration of 830 fs is demonstrated. The high harmonic frequency is obtained via coupling of the laser cavity to an intracavity diamond heat spreader bonded to a semiconductor saturable absorber mirror.
Inspec keywords: laser mode locking; mirrors; flip-chip devices; optical saturable absorption; semiconductor lasers
Other keywords: power 1 W; frequency 200 GHz; time 830 fs; power 900 mW; passive harmonic mode locking; laser cavity; time 800 fs; intracavity diamond heat spreader; flip-chip semiconductor disc laser; semiconductor saturable absorber mirror; frequency 193 GHz
Subjects: Optical saturation and related effects; Laser beam modulation, pulsing and switching; mode locking and tuning; Optical transient phenomena, self-induced transparency, optical saturation and related effects; Design of specific laser systems; Optical lenses and mirrors; Semiconductor lasers; Laser beam modulation, pulsing and switching; mode locking and tuning; Lasing action in semiconductors
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