RT Journal Article
A1 K. Ishigaki
A1 M. Shiraishi
A1 S. Suzuki
A1 M. Asada
A1 N. Nishiyama
A1 S. Arai

PB iet
T1 Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes
JN Electronics Letters
VO 48
IS 10
SP 582
OP 583
AB Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes (RTDs) is reported. A direct intensity modulation of the RTD oscillators was demonstrated, and the frequency response was measured. It was found that the 3 dB cutoff modulation frequency was limited by the parasitic elements of the external circuit, and increased up to 4.5 GHz by reducing such parasitic elements. Wireless data transmission by direct amplitude shift keying was demonstrated using an RTD oscillating at 542 GHz with cutoff frequency of 1.1 GHz. The BERs for bit rates of 2 and 3 Gbit/s were found to be 2×10−8 and 3×10−5, respectively.
K1 direct intensity modulation
K1 frequency response
K1 frequency 1.1 GHz
K1 terahertz-oscillating RTD oscillators
K1 frequency 542 GHz
K1 parasitic elements
K1 bit rate 3 Gbit/s
K1 terahertz-oscillating resonant tunnelling diode oscillators
K1 modulation frequency
K1 bit rate 2 Gbit/s
K1 wireless data transmission characteristics
K1 frequency 4.5 GHz
DO https://doi.org/10.1049/el.2012.0849
UL https://digital-library.theiet.org/;jsessionid=254987om80rs2.x-iet-live-01content/journals/10.1049/el.2012.0849
LA English
SN 0013-5194
YR 2012
OL EN