Improved quantum efficiency of InGaAs/InP photodetectors using Ti/Au-SiO2 phase-matched-layer reflector
Improved quantum efficiency of InGaAs/InP photodetectors using Ti/Au-SiO2 phase-matched-layer reflector
- Author(s): Jinrong Yuan ; Baile Chen ; A.L. Holmes
- DOI: 10.1049/el.2012.0806
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- Author(s): Jinrong Yuan 1 ; Baile Chen 1 ; A.L. Holmes 1
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View affiliations
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Affiliations:
1: Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, USA
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Affiliations:
1: Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, USA
- Source:
Volume 48, Issue 19,
13 September 2012,
p.
1230 – 1232
DOI: 10.1049/el.2012.0806 , Print ISSN 0013-5194, Online ISSN 1350-911X
The quantum efficiency of an InGaAs/InP photodetector has increased from 50 to 70.2% at λ=1550 nm by applying a Ti/Au reflector with a SiO2 phase-matched-layer at the back of the device. The ultra-broadband mirror has a simple fabrication process and promising reflectivity (97.9% for the reference and 79% for the InGaAs/InP photodetector). These results are comparable to the other more commonly used high-reflectivity mirrors.
Inspec keywords: optical fabrication; mirrors; gold; silicon compounds; reflectivity; optical elements; photodetectors; titanium; III-V semiconductors; indium compounds; gallium arsenide
Other keywords:
Subjects: Detection of radiation (bolometers, photoelectric cells, i.r. and submillimetre waves detection); Optical fabrication, surface grinding; Photodetectors; Optical lenses and mirrors
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