106 W continuous-wave output power from vertical-external-cavity surface-emitting laser

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© The Institution of Engineering and Technology
Published 28/07/2012
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Abstract

A report is presented on an optically-pumped semiconductor disk laser providing a continuous-wave output power of 106 W at a heatsink temperature of 3 °C. The laser, which operates in the transversal multimode regime, emits at a wavelength of 1028 nm. This high output power is achieved by carefully optimising the chip design, the growth process, and the bonding layer.

Inspec keywords: semiconductor lasers; surface emitting lasers

Other keywords: vertical-external-cavity surface-emitting laser; optically-pumped semiconductor disk laser; power 106 W; growth process; continuous-wave output power; transversal multimode regime; chip design; temperature 3 degC; wavelength 1028 nm; bonding layer

Subjects: Lasing action in semiconductors; Laser resonators and cavities; Semiconductor lasers; Laser resonators and cavities; Design of specific laser systems

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Correspondence
This article has following corresponding article(s):
The power of VECSELs
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