%0 Electronic Article %A Yiran Li %A Li Lu %A S.T. Block %A Changzhi Li %K Si %K temperature -50 degC to 120 degC %K physical model %K voltage 0.6 V %K I-V characteristics %K zero temperature coefficient point %K AMI process %K MOSFET %K metal-oxide-semiconductor field-effective transistors %K size 0.5 mum %K low ZTC-point-bias-voltages %K temperature characteristics %K N-type Schottky barrier diodes %K low-voltage sensing applications %X N-type Si Schottky barrier diodes (SBDs) have been fabricated in AMI 0.5 µm process. The I-V characteristics have been characterised from −50 to 120°C. The bias voltages for achieving the zero temperature coefficient (ZTC) point were observed to be around 0.6 V, which are much smaller than the voltages for metal-oxide-semiconductor field-effective transistors (MOSFETs) to obtain the same point. A physical model was extracted for the SBDs, demonstrating the low ZTC-point-bias-voltages which are advantageous for low-voltage applications. %@ 0013-5194 %T Temperature characteristics of Schottky barrier diodes for low-voltage sensing applications %B Electronics Letters %D March 2012 %V 48 %N 7 %P 406-408 %I Institution of Engineering and Technology %U https://digital-library.theiet.org/;jsessionid=4zxq1d9k15fj.x-iet-live-01content/journals/10.1049/el.2012.0318 %G EN