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Integrated MEMS-tunable VCSELs with high modulation bandwidth

Integrated MEMS-tunable VCSELs with high modulation bandwidth

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The modulation bandwidth of micromachined tunable VCSELs is typically limited by the parasitic capacitance associated with the large mesa platform for the movable mirror. Presented is a simple technology for wafer-scale integration of tunable VCSELs with low mesa capacitance and high modulation bandwidth. Small signal measurements show a 3dB bandwidth of up to 6 GHz over a tuning range of 18 nm. Digital modulation is demonstrated with error-free data transmission at 5 Gbit/s and eye diagrams at 10 Gbit/s.

Inspec keywords: semiconductor lasers; laser tuning; integrated optics; laser cavity resonators; surface emitting lasers; micro-optomechanical devices; optical modulation; optical information processing

Other keywords: movable mirror; mesa platform; micromachined tunable VCSEL; error-free data transmission; wafer-scale integration; signal measurements; integrated MEMS-tunable VCSEL; bit rate 5 Gbit/s; parasitic capacitance; digital modulation; high modulation bandwidth; eye diagrams; bit rate 10 Gbit/s

Subjects: Laser resonators and cavities; MEMS and NEMS device technology; Laser beam modulation, pulsing and switching; mode locking and tuning; Lasing action in semiconductors; Micro-optical devices and technology; Integrated optics; Semiconductor lasers; Design of specific laser systems; Integrated optics; Laser beam modulation, pulsing and switching; mode locking and tuning; Laser resonators and cavities; Micro-optical devices and technology; Micromechanical and nanomechanical devices and systems

References

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      • Kögel, B., Abbaszadehbanaeiyan, A., Westbergh, P., Haglund, Å., Gustavsson, J., Bengtsson, J., Haglund, E., Frederiksen, H., Debernardi, P., Larsson, A.: `Integrated tunable VCSELs with simple MEMS technology', IEEE Int. Semiconductor Laser Conf. (ISLC), 2010, Kyoto, Japan.
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